A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage expressions of this device. Comparison with the other models reveals a good agreement.

This paper presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding gate (SG) MOSFET by combining Dual-Gate-Material, Graded-Channel and Gate Stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short channel effect.

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