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A differential 70 GSa/s track-and-hold amplifier has been designed and fabricated in a 320 GHz-f T InP double heterojunction bipolar transistor process. Measurements show a 51 GHz small-signal bandwidth with an S 11 parameter lower than −15 dB up to 56 GHz. The transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total harmonic distortion <−46 dB up to 7 GHz and <−37 dB over the whole measurement range.Introduction: Most high sampling frequency and linear ADCs architectures often use one or several track-and-hold amplifiers (THAs) as input interface. ADC performances are based on those of the THA which is the main block. These THA circuits need a large bandwidth, a good linearity, a high sampling rate with an excellent isolation and low losses during hold mode. High sampling and large bandwidth THAs are fabricated in InP [1,2] or SiGe [3,4] technologies. These THAs with 40 GSa/s [3] and 50 GSa/s [2, 4] sampling rate are based on a switched emitter follower (SEF) structure while the circuit presented in [1] uses base-collector diodes. These circuits show small-signal bandwidths between 16 and 50 GHz.In this Letter we present a differential 70 GSa/s THA circuit fabricated in InP-DHBT with 50 GHz small-signal bandwidth. 70 GSa/s transient measurements are presented.

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