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Nowadays, for the field of wireless communications, the good design of radio frequency receiver for wireless communication applications is considered one of the main targets in radio frequency research. In ultra-wideband (UWB) receivers, low noise amplifier is considered the most important building block in UWB receiver structure. In this paper we provide the design and simulation of ultra-wideband low noise amplifier to get radio receiver with good performance in wireless communication application. This paper introduces the design and simulation of ultrawideband low noise amplifier using 130 nm CMOS technology. This design uses three stages amplifier. The design provides bandwidth range from (3.9 GHz to 15 GHz) with power gain (S 21 ) of 10 dB. The output noise of the proposed amplifier is 300 uV rms . The proposed LNA is designed using 1.2 V power supply, the dissipated power of the proposed amplifier is 1.2 mW. The proposed amplifier gives noise figure of 1.5 dB and input referred third order intercept point (IIP3) reached to 20 dBm.

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