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Power-gating (PG) techniques have been widely used in modern digital ICs to reduce their standby leakage power during idle periods. Meanwhile, virtual supply voltage (VVDD) of a power-gated IC is a function of strength of a PG device and total current flowing through it. Thus, the VVDD level becomes susceptible to 1) negative bias temperature instability (NBTI) degradation that weakens the PG device over time and 2) temporal temperature variation that affects active leakage current (thus total current) of the IC. To account for the NBTI degradation, the PG device must be upsized such that it guarantees a minimum VVDD level that prevents any timing failure over chip lifetime. Moreover, the PG device is also sized for the worst-case voltage drop partly resulted by a large amount of active leakage current at high temperature. However, increasing the size of the PG device to consider both effects leads to higher VVDD (thus active leakage power) than necessary at low temperature and/or in early chip lifetime. To minimize active leakage power increase due to these effects, we propose two techniques that adjust strength of a PG device based on its usage and IC's temperature at runtime. Both techniques are applied to an experimental setup modeling total current consumption of an IC in 32nm technology and their efficacy is demonstrated in the presence of within-die spatial process and temperature variations. On average of 100 die samples, they can reduce active leakage power by up to 10% in early chip lifetime. KeywordsNegative bias temperature instability, process and temperature variations, power-gating, active leakage power

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Per-core voltage domains can improve performance under a power constraint. Most commercial processors, however, only have one chip-wide voltage domain because splitting the voltage domain into per-core voltage domains and powering them with multiple off-chip voltage regulators (VRs) incurs a high cost for the platform and package designs. Although using on-chip switching VRs can be an alternative solution, integrating high-quality inductors and cores on the same chip has been a technical challenge. In this paper, we propose a cost-effective power delivery technique to support percore voltage domains. Our technique is based on the observations that (i) core-to-core voltage variations are relatively small for most execution intervals when the voltages/frequencies are optimized to maximize performance under a power constraint and (ii) per-core power-gating devices augmented with small circuits can serve as low-cost VRs that can provide high efficiency in situations like (i). Our experimental results show that processors using our technique can achieve power efficiency as high as those using per-core onchip switching VRs at much lower cost.