All-printed transistors consisting of interconnected networks of various types of two-dimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks. The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.

Liquid phase exfoliation has become an important method for the production of large quantities of 2-dimensional nanosheets. This method is versatile, having been used to produce dozens of different 2D materials in a range of stabilizing liquids. The resultant liquidsuspended nanosheets have been characterized in great detail and have been processed into a number of structures for a wide range of applications. This has led to a growing number of researchers adopting this method. As a result, best practise in terms of experimental procedure has evolved rapidly over recent years. As experimental complexity has increased it has become more and more difficult to discuss the rational behind a chosen experimental procedure in full detail using standard "Methods" sections due to the frequent use of procedures developed in related prior reports. This can make it difficult to reproduce complex procedures and acts as a barrier to new researchers entering the field. To address this shortcoming, here we describe in detail the experimental methods and best practice used in our group when producing liquid exfoliated nanosheets.

Solution-processed semiconducting transition metal dichalcogenides (TMDs) are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity.Here, we report a new molecular strategy to boost the electrical performance of TMD-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solutionprocessed transition metal disulfides (MS2) and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order-ofmagnitude in field-effect mobility (µFE), current ratios (ION / IOFF), and switching times (τS) of liquid-gated transistors, reaching 10 -2 cm 2 V -1 s -1 , 10 4 , and 18 ms, respectively. Our functionalization strategy is an universal route to simultaneously enhance the electronic connectivity in MS2 networks and tailor on demand their physicochemical properties according to the envisioned applications.