Silicon (Si) integration is a critical step toward future applications of multifunctional oxides as nanoscale electronics and spintronic devices, because of the low cost and scalability of silicon substrates. As a demonstration, self-assembled (La0.7Sr0.3MnO3) x : NiO1–x (LSMO:NiO) vertically aligned nanocomposite (VAN) thin films with exchange bias (EB) properties have been successfully deposited on buffered Si substrates. To enable the epitaxial growth of LSMO:NiO VAN, SrRuO3/TiN was first grown as the buffer layers on Si substrates. The composition of the two-phases has been varied with x = 0.25, 0.5, 0.75, and 1 to explore the electrical transport and magnetic properties of the VAN system on Si. The irreversible temperature T irr was found to increase with increasing NiO composition, with the highest for (LSMO)0.25­(NiO)0.75 of ∼275 K, when the field was applied in the out-of-plane direction. In addition, the EB effect has been observed for all the nanocomposite films, with the highest H EB value of 300 Oe for (LSMO)0.25­(NiO)0.75. The integration of the VAN system on Si with pronounced EB properties presents a promising approach toward future practical devices using oxide VANs on Si.