This work was carried out in collaboration between all authors. Author A. Raihan designed the molecular study, established the protocol and wrote the manuscript drafts. Author ASMN designed the phenotypic study and performed the statistical analysis. Author A. Rahman performed the statistical analysis of the paper, did the referencing and information checking for the manuscript. Author LR provided intellectual guidance during experimentation. All authors read and approved the final manuscript.

Author AR has undertaken the molecular study of Trichoderma spp. and wrote the manuscript. Author MK has carried out the molecular characterization of Fusarium. Author MEMF purified the two fungal samples and phenotypically characterized them. Author MAR has edited the manuscript. Author AFMJU grew tomato plants in his field and assisted in collection and isolation of Fusarium. Author ASMN is the expert Pathologist leading the program by providing intellectual guidance and overall supervision.

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Late blight (LB), caused by Phytophthora infestans (Mont.) de Bary, is the most destructive disease of potato. The main objective of this study was to evaluate 72 potato lines, derived from crosses of the recipient cv. ACI Pakri-1 (female) and a LB resistant donor variety (male), against LB disease. Parent materials, LB susceptible varieties Diamant and BARI Alu-40 and LB resistant variety BARI Alu-77 were used as check varieties. The experiment was conducted with three levels of inoculums pressure (i) LB inoculation & no fungicide, (ii) No LB inoculation & no fungicide and (iii) No LB inoculation & fungicide. LB infection was assessed at 10 day intervals by scoring the percentage of foliage destruction. Subsequently, the area under the disease progress curve (AUDPC), relative AUDPC and susceptible scale value were estimated. Three categories of potato lines were selected considering level of LB infection and tuber appearance -(a) LB resistant -8 lines, (b) LB tolerant -14 lines, and (c) LB susceptible -14 lines. The foliage destruction of selected LB resistant

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