A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesn't exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D Sentaurus TM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named "Common Anode three-pole" and "Common Cathode three-pole", within the context of "two-chip" integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P + wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P + wall in order to ensure the thyristor triggering in the reverse conducting mode.

The RC-IGBT-thyristor is a bidirectional current device proposed as an elementary structure for the integration of a multiphase converter using the "two-chip" integration approach [1]. In this paper, 2D simulations are on one hand used to study the impact of using trenches filled with dielectric [2] on the static and dynamic performance of the RC-IGBT-thyristor and on the other hand to validate the operating modes of the common anode and common cathode power chips that make use of the RC-IGBT-thyristor that has trenches filled with dielectric on the backside. In the RC-IGBT-Thyristor with trenches, the trenches are placed between N + anode regions to allow the turn-on of the thyristor sections during the RC-IGBT-thyristor reverse conducting mode. The use of these trenches allows reducing the lengths of N + /P + anode diffusion regions (as compared to the case of the RC-IGBT-Thyristor [1]) and also improves the uniformity of the current density distribution both in the forward and reverse conducting modes of the RC-IGBT-thyristor. The RC-IGBT-thyristor with trenches filled with dielectric is then used to create the two monolithic common anode and common cathode power chips. These three-pole power chips, were simulated separately and then associated to form an Hbridge converter.

-The authors present a 3-chip mixed integration approach that combines monolithic silicon multi-terminal power chips and flip-chip assembly on a printed circuit board (PCB) for the realization of a multiphase power converter. The overall approach allows for taking advantage of the degrees of freedom offered by silicon and PCB technologies with a limited and wellmastered complexity. The multiphase converter is integrated within three multi-terminal chips that are judiciously packaged, using the partial flip-chip, on a PCB board so as to reduce the switching cell stray inductance as well as the impact of voltage variations on the common mode current that flows through the converter's PCB. Using Si and SiC dipole MOSFET and diode chips, converters based on the 3-chip approach were realized and compared to the conventional one. The obtained commutation loop inductance value is reduced by at least a factor of two as compared to that of the conventional one.