Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest for discovering new 2D metal oxides with ultrahigh transparency and high mobility. While the former can be achieved by reducing the thickness of oxide films to only a few nanometers, the latter is more commonly realized by intentional doping. This article reports a one‐step synthesis of few‐unit‐cell‐thick and laterally large antimony‐doped indium oxide (IAO). The doping process occurs spontaneously when the oxide is grown on the surface of a molten Sb–In alloy and 2D IAO nanosheets can be easily printed onto desired substrates. With thicknesses at the atomic scale, these materials exhibit excellent transparency exceeding 98% across the visible and near‐infrared range. Field‐effect transistors based on low‐doped IAO nanosheets reveal a high electron mobility of ≈40 cm2 V−1 s−1. Additionally, a notable photoresponse is observed in 2D IAO‐based photodetectors under ultraviolet (UV) radiation. Photoresponsivities of low‐doped and highly doped IAO at a wavelength of 285 nm are found to be 1.2 × 103 and 0.7 × 103 A W−1, respectively, identifying these materials as promising candidates for the fabrication of high‐performance optoelectronics in the UV region.

Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of semiconducting materials and cost‐effective synthesis processes. In this report, a simple approach is proposed to achieve 2‐nm‐thick indium oxide nanosheets from liquid metal surfaces by employing a squeeze printing technique and thermal annealing at 250 °C in air. The resulting materials exhibit a high degree of transparency (>99 %) and an excellent electron mobility of ≈96 cm2 V−1 s−1, surpassing that of pristine printed 2D In2O3 and many other reported 2D semiconductors. UV‐detectors based on annealed 2D In2O3 also benefit from this process step, with the photoresponsivity reaching 5.2 × 104 and 9.4 × 103 A W−1 at the wavelengths of 285 and 365 nm, respectively. These values are an order of magnitude higher than for as‐synthesized 2D In2O3. Utilizing transmission electron microscopy with in situ annealing, it is demonstrated that the improvement in device performances is due to nanostructural changes within the oxide layers during annealing process. This work highlights a facile and ambient air compatible method for fabricating high‐quality semiconducting oxides, which will find application in emerging transparent electronics and optoelectronics.

High efficiency and a compact footprint are desired properties for electro-optic modulators. In this paper, we propose, theoretically investigate and experimentally demonstrate a recirculating phase modulator, which increases the modulation efficiency by modulating the optical field several times in a non-resonant waveguide structure. The 'recycling' of light is achieved by looping the optical path that exits the phase modulator back and coupling it to a higher order waveguide mode, which then repeats its passage through the phase modulator. By looping the light back twice, we were able to demonstrate a recirculating phase modulator that requires nine times lower power to generate the same modulation index of a single pass phase modulator. This approach of modulation efficiency enhancement is promising for the design of advanced tunable electro optical frequency comb generators and other electro-optical devices with defined operational frequency bandwidths.

Programmable photonic integrated circuits (PICs), offering diverse signal processing functions within a single chip, are promising solutions for applications ranging from optical communications to artificial intelligence. While the scale and complexity of programmable PICs are increasing, their characterization, and thus calibration, becomes increasingly challenging. Here we demonstrate a phase retrieval method for programmable PICs using an on-chip fractional-delay reference path. The impulse response of the chip can be uniquely and precisely identified from only the insertion loss using a standard complex Fourier transform. We demonstrate our approach experimentally with a four-tap finite-impulse-response chip. The results match well with expectations and verify our approach as effective for individually determining the taps’ weights without the need for additional ports or photodiodes.