The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n + nn + ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.