This paper study the characteristics of nano crystalline silicon prepared with the use of electrochemical etching with etching time (15,20) min for salt and Nitric acid (HNO3) and etching time (15,20) min for Ethanol and Hydrofluoric acid, and study the effect of this solutions on the characteristics of porous silicon (ps) will be produced by electrochemical etching by using electrochemical etching from p-type bulk silicon with resistivity (1-10 Ω.cm) with different time. after that, make a comparison for the morphological properties for porous silicon. Research employing X-ray diffraction and scanning electron microscopy instruments were also performed on the samples that were produced as a result. Micromachining etching uses electrochemical etching of silicon in HF solution. New wafer-etched structures are reported. Wall arrays, hole arrays, meander-shaped structures, spiral-like walls, microtubes, and more are produced. The electrochemical etch process and KOH etching time of the original pattern on final geometries are modelled.

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This paper study the characteristics of nano crystalline silicon prepared by using electrochemical etching with etching time {5,25} min for Hydrofluoric acid (HF) acid and Nitric acid (HNO3) and etching time {5,25} min for Ethanol and Hydrofluoric acid; and study the effect of this solutions on the of features porous silicon(P-Si) will use electrochemical etching for preparation  from p-type silicon wafer with resistivity ( 1-10 Ω.cm ) with different time. after that, make a comparison for the morphological properties for porous silicon.

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