Abstract— In this paper, degradation effects such as the self-heating effect and the DIBL effect in 2D-MoS2-based MOSFETs are investigated through simulations. These are transistors with Al2O3 and HfO2 as the gate oxide and SiO2 and HfO2 as the back oxide (BOX). The self-heating effect (SHE) is simulated using the thermodynamic transport model. The dependence of the DIBL effect (Drain Induced Barrier Lowering) and the lattice temperature in the center of the channel on the gate length for transistors with different gate oxide and BOX materials is considered. Transistors are considered where the channel is fully and partially (just below the gate) covered by gate oxide. It is shown that the transistors with Al2O3 as gate oxide and SiO2 as BOX materials have higher immunity to DIBL effect and transistors with HfO2 as gate oxide and HfO2 as BOX materials have higher immunity to SHE.