Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

Holography is the most promising route to true-to-life 3D projections, but the incorporation of complex images with full depth control remains elusive. Digitally synthesised holograms 1 – 7 , which do not require real objects to create a hologram, offer the possibility of dynamic projection of 3D video 8 , 9 . Extensive efforts aimed 3D holographic projection 10 – 17 , however available methods remain limited to creating images on a few planes 10 – 12 , over a narrow depth-of-field 13 , 14 or with low resolution 15 – 17 . Truly 3D holography also requires full depth control and dynamic projection capabilities, which are hampered by high crosstalk 9 , 18 . The fundamental difficulty is in storing all the information necessary to depict a complex 3D image in the 2D form of a hologram without letting projections at different depths contaminate each other. Here, we solve this problem by preshaping the wavefronts to locally reduce Fresnel diffraction to Fourier holography, which allows inclusion of random phase for each depth without altering image projection at that particular depth, but eliminates crosstalk due to near-orthogonality of large-dimensional random vectors. We demonstrate Fresnel holograms that form on-axis with full depth control without any crosstalk, producing large-volume, high-density, dynamic 3D projections with 1000 image planes simultaneously, improving the state-of-the-art 12 , 17 for number of simultaneously created planes by two orders of magnitude. While our proof-of-principle experiments use spatial light modulators, our solution is applicable to all types of holographic media.

Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6 × 10 −4 , and by direct light coupling and far-field imaging, yielding a value of 3.5 × 10 −4 . The formation mechanism of the modification is discussed.

The excitatory and inhibitory effects of single and brief infrared (IR) light pulses (2 µm) with millisecond durations and various power levels are investigated with a custom-built fiber amplification system. Intracellular recordings from motor axons of the crayfish opener neuromuscular junction are performed ex vivo. Single IR light pulses induce a membrane depolarization during the light pulses, which is followed by a hyperpolarization that can last up to 100 ms. The depolarization amplitude is dependent on the optical pulse duration, total energy deposition and membrane potential, but is insensitive to tetrodotoxin. The hyperpolarization reverses its polarity near the potassium equilibrium potential and is barium-sensitive. The membrane depolarization activates an action potential (AP) when the axon is near firing threshold, while the hyperpolarization reversibly inhibits rhythmically firing APs. In summary, we demonstrate for the first time that single and brief IR light pulses can evoke initial depolarization followed by hyperpolarization on individual motor axons. The corresponding mechanisms and functional outcomes of the dual effects are investigated.

Laser-written waveguides created inside transparent materials are important components for integrated optics. Here, we demonstrate that subsurface modifications induced by nanosecond pulses can be used to fabricate tubular-shaped "in-chip" or buried waveguides inside silicon. We first demonstrate single-line modifications, which are characterized to yield a refractive index depression of ≈2 × 10 −4 compared to that of the unmodified crystal. Combining these in a circular geometry, we realized 2.9-mm-long, 30-μm core-diameter waveguides inside the wafer. The waveguides operate in a single-mode regime at a wavelength of 1300 nm. We use near-and far-field imaging to confirm waveguiding and for optical index characterization. The waveguide loss is estimated from scattering experiments as 2.2 dB/cm.