Accurate numerical modeling for SOI devices of technical interest has always been challenging concerning the accuracy of the physical models as well as concerning the convergence properties of the numerical algorithms. For partially depleted devices the most important underlying reason is the necessity of a precise modeling of low impact ionization and diffusion currents in order to get reasonable results for the kink effect and noise. On the other hand in fully depleted devices the DIBL effect at smaller channel lengths can only be sufficiently suppressed using thin Silicon films. Therefore a precise modeling of size quantization based on the Schrödinger Equation is typically needed for fully depleted devices. Today even more challenges exist due to the application of strain, hetero junctions and non standard interface and channel orientations. In this paper it is demonstrated that most of these challenges can be adequately addressed today.