This paper presents a study of nanoclusters obtained by electrochemical deposition (ECD) of zinc in the a‐SiO2/Si‐n track template. The nanoporous SiO2 layer on Si substrate (track template) has been created by irradiation with swift Xe ions and further etching in HF solution. The morphology of SiO2/Si‐n track templates and precipitated Zn‐based clusters are examined using a scanning electron microscope JSM 7500F. The crystallographic structure of the Zn‐based precipitates was investigated by means of X‐ray diffraction (XRD). X‐ray analysis is carried out on a D8 ADVANCE ECO X‐ray diffractometer. The Bruker AXSDIFFRAC.EVAv.4.2 software and the international ICDD PDF‐2 database are used to identify the phases and study the crystal structure. From XRD data, it has been found the formation of three crystalline phases of zinc oxide nanocrystals electro‐deposited into SiO2/Si track template: wurtzite, sphalerite, and rock salt structures. Wurtzite is obtained on an amorphous surface of silicon dioxide. Possible mechanisms of ZnO formation instead of metal Zn nanocrystals are discussed.

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ZnSe2O5 nanocrystals with an orthorhombic structure were synthesized by electrochemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 10 7 ions/cm 2. The lattice parameters determined by the X-ray diffraction and calculated by the CRYSTAL computer program package are very close to each other. It was shown that ZnSe2O5 has a direct band gap of 2.8 eV at the Γ-point. In addition, the calculated charge distribution and chemical bonds show that the crystal has an ion-covalent nature. The photoluminescence excited by photons at 300 nm has a low intensity arising mainly due to zinc and oxygen vacancies.

ZnSeO3 nanocrystals with an orthorhombic structure were synthesized by electrochemical and chemical deposition into SiO2/Si ion-track template formed by 200 MeV Xe ion irradiation with the fluence of 107 ions/cm2. The lattice parameters determined by the X-ray diffraction and calculated by the CRYSTAL computer program package are very close to each other. It was found that ZnSeO3 has a direct band gap of 3.8 eV at the Γ-point. The photoluminescence excited by photons at 300 nm has a low intensity, arising mainly due to zinc and oxygen vacancies. Photoluminescence excited by photons with a wavelength of 300 nm has a very low intensity, presumably due to electronic transitions of zinc and oxygen vacancies.

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