One-dimensional semiconductor nanostructures combine electron mobility in length direction with the possibility of tailoring the physical properties by confinement effects in radial direction. Here we show that thin CdSe quantum nanowires exhibit low-temperature fluorescence spectra with a specific universal structure of several sharp lines. The structure strongly resembles the pattern of bulk spectra but show a diameter-dependent shift due to confinement effects. Also the fluorescence shows a pronounced complex blinking behavior with very different blinking dynamics of different emission lines in one and the same spectrum. Time- and space-resolved optical spectroscopy are combined with high-resolution transmission electron microscopy of the very same quantum nanowires to establish a detailed structure-property relationship. Extensive numerical simulations strongly suggest that excitonic complexes involving donor and acceptor sites are the origin of the feature-rich spectra.

The charge state of free standing axial type-II CdSe/CdTe hetero-nanowires is monitored via electrostatic force microscopy. The CdSe and the CdTe segment which are identified by Raman spectroscopy are found to be negatively and positively charged, respectively. The charge state is monitored without and with local illumination. We found that the magnitude of opposite charging in the respective nanowire segment is increasing with illumination power, which is attributed to a charge separation of the photogenerated electron-hole pairs across the CdSe/CdTe interface.

Orientational dependence of the IR absorbing amide bands of silk is demonstrated from two orthogonal longitudinal and transverse microtome slices with a thickness of only ∼100 nm. Scanning near-field optical microscopy (SNOM) which preferentially probes orientation perpendicular to the sample’s surface was used. Spatial resolution of the silk–epoxy boundary was ∼100 nm resolution, while the spectra were collected by a ∼10 nm tip. Ratio of the absorbance of the amide-II C-N at 1512 cm − 1 and amide-I C=O β -sheets at 1628 cm − 1 showed sensitivity of SNOM to the molecular orientation. SNOM characterisation is complimentary to the far-field absorbance which is sensitive to the in-plane polarisation. Volumes with cross sections smaller than 100 nm can be characterised for molecular orientation. A method of absorbance measurements at four angles of the slice cut orientation, which is equivalent to the four polarisation angles absorbance measurement, is proposed.

Orientational dependence of the IR absorbing amide bands of silk is demonstrated from two orthogonal longitudinal and transverse microtome slices only $\sim 100$~nm thick. A scanning near-field optical microscopy (SNOM) which preferentially probes orientation perpendicular to the sample's surface was used. Spatial resolution of silk-epoxy boundary was defined with a $\sim 100$~nm resolution while the spectra were collected by a $\sim 10$~nm tip. Ratio of the absorbance of the amide-II C-N at 1512~cm$^{-1}$ and amide-I C=O $\beta$-sheets at 1628~cm$^{-1}$ showed sensitivity of SNOM to the molecular orientation. SNOM characterisation is complimentary to the far-field absorbance which is sensitive to the in-plane polarisation. Volumes with cross sections smaller than 100~nm can be characterised for molecular orientation. A method of absorbance measurements at four angles of slice cut orientation, which is equivalent to the four polarisation angles absorbance measurement is proposed.

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