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c -axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO3‖(001) Si and [100] BaTiO3‖[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a relaxed buffer layer of BaxSr1−xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼100nm, corroborating the orientation of the ferroelectric film.

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Limited Print and Electronic Distribution RightsThis document and trademark(s) contained herein are protected by law. This representation of RAND intellectual property is provided for noncommercial use only. Unauthorized posting of this publication online is prohibited. Permission is given to duplicate this document for personal use only, as long as it is unaltered and complete. Permission is required from RAND to reproduce, or reuse in another form, any of its research documents for commercial use. For information on reprint and linking permissions, please visit www.rand.org/pubs/permissions.The RAND Corporation is a research organization that develops solutions to public policy challenges to help make communities throughout the world safer and more secure, healthier and more prosperous. RAND is nonprofit, nonpartisan, and committed to the public interest. RAND's publications do not necessarily reflect the opinions of its research clients and sponsors.