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This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n + polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iV oc of 714 mV and saturation current density J 0b ′ of 10.3 fA/cm 2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al 2 O 3 -passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm 2 commercial grade n-type Czochralski wafers.

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