The Burgers vector and inclination angles for threading dislocations which induce current leakage have been investigated for SiC insulated gate bipolar transistors fabricated with a thickness of a drift layer as large as 100 μm on a 4H–SiC substrate. Direct analysis by convergent-beam electron diffraction to a threading mixed dislocation (TMD) inducing current leakage revealed that the Burgers vector was b = [ ], which has been theoretically predicted but had not been observed. Although a range of inclination zenith angles of TMDs from c-axis has been observed by non-destructive two-photon-excited photoluminescence as 12°–14°, which is in good agreement with theoretical values, their azimuthal angles on (0001) plane are significantly different from theoretical predictions.

The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current–voltage (I–V) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the SF(4,2) structure inside a triangular defect do not lead to deterioration of device performance in this case.

MOS interface traps are characterized by device simulation on the basis of temperature dependence of lateral MOS-TEG devices on the same Al-implanted p-type region as vertical device. The simulation shows fairly large Dit in SiO2/4H-SiC interface, corresponding to the suggested trap density inside the conduction band. Temperature dependence of on-resistance is explained by application of evaluated interface properties to calculation of current voltage properties of vertical DMOSFET.

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.

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