Background: Breast cancer is the most common cancer among women worldwide. It is the main reason why women die from cancer. Early diagnosis due to increased public awareness and better screening helps to tackle the disease through surgical resection and curative therapies. Chemotherapies are frequently used for cancer treatment, but these have severe adverse effects due to a lack of target specificity. Objective: Formulation development scientists and clinicians are now particularly concerned with developing safe and efficient drug delivery systems for breast cancer treatment. Methods: Potentially relevant literature to get the latest developments and updated information related to properties, functionalization, toxicity and application of carbon nanotubes in breast cancer treatment has been obtained from Web of Science, Scopus, and PubMed portals. Results: Nanomedicine has emerged as a novel tool for target-specific delivery systems and other biomedical applications. Carbon nanotubes (CNTs) are gaining popularity due to their unique mechanical and physiochemical properties for the diagnosis and treatment of cancer. It is a promising carrier that can deliver micro and macromolecules to the cancer cell. Conclusion: CNTs can be functionalized at the surface with different functional groups, which helps in targeting the drugs to target cancer cells. The present review has elaborated on different functionalization approaches and toxicity aspects of CNTs

We report on a Pt/AlGaN/GaN HEMT-based gas sensor with interdigitated electrodes for NO 2 sensing over the temperature range of 30 °C-300 °C. The sensors show a change in current (ΔI) of 0.5 mA with sensitivity of 1.2% for 10 ppm NO 2 at 30 °C and recovers at elevated temperature. The sensitivity increases with the increase in relative humidity (0 to 90%) at 30 °C. High sensitivity of 5.5% with a corresponding ΔI of 1.8 mA is achieved for 10 ppm NO 2 concentration at 300 °C, which is higher than the reported value under similar measurement conditions. The large surface area of the interdigitated electrodes and the catalytic property of the platinum functionalization layer enables high sensitivity for low NO 2 concentrations of <10 ppm.

We report on Pt/AlGaN/GaN high electron mobility transistor (HEMT) based gas sensor with interdigitated electrodes for NO2 sensing in the temperature range of 30 °C–300 °C. The effect of the length of platinum functionalization layer (gate length), gas detection limit and the activation energies were investigated in this work. It was found that the sensor with the shortest gate length exhibited the lowest sensing response, but highest responsivity and vice versa. The sensing response of 1.2% with the corresponding ΔI of 400 μA was obtained for 50 ppb of NO2 concentration, which is the lowest NO2 concentration reported for Pt/AlGaN/GaN HEMT based sensors. Both the efficient sensing mechanism of the interdigitated electrodes and the catalytic property of platinum functionalization layer enable higher sensing response and lower detection limit for NO2. Activation energies of 0.33 eV/ion and 0.64 eV/ion for adsorption and desorption of O− ions, respectively have been determined in these sensors.

Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in a cumulative two-dimensional electron gas (2DEG) concentration of 4.3 × 1013 cm−2 across six GaN channels. The sample showed sheet resistances of 170 Ω/sq. and 101 Ω/sq. at room temperature and 90 K, respectively. The source of 2DEG in the buried GaN channels of the heterostructure was investigated. The C–V measurements conducted on UID MC-HEMTs excluded the possibility of the valence band being the source of 2DEG and the consequent formation of two-dimensional hole gas at the buried GaN-channel/AlGaN-barrier interfaces. A comparison of the experimentally obtained 2DEG concentration with the simulated data suggests the presence of donor-like trap states, situated at 0.6 to 0.8 eV above the valence band at the buried GaN-channel/AlGaN-barrier interfaces, which act as the source of 2DEG in UID MC-HEMT heterostructures.

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