Fabrication of thin Cu layer on a zinc oxide (ZnO) film was performed by a novel ambient temperature chemical solution process. The process consisted of two steps, introduction of Cu ion into ZnO film by immersing in an aqueous copper(II) sulfate solution, and reduction of Cu ion to metallic Cu by immersing in an aqueous potassium borohydride (KBH 4 ) solution. The resultant Cu layer showed resistivity of 2.8 x 10 -4 Ω cm. © 2000 The Electrochemical Society. S1099-0062(00)08-015-9. All rights reserved. (0) layer by photoreduction of the Pd 2+ ions using UV irradiation, and (iii) electroless Cu plating on the Pd (0) layer. This method is suitable to mass production because the process can be achieved only by immersion in several aqueous solutions. The use of electroless Cu plating, however, is limited under industrial applications because of the harmful constituents such as ethylenediaminetetraacetic acid and formaldehyde contained in the solution.We have developed a chemical solution process for fabricating Cu layer on ZnO film at an ambient temperature. The process consists of two steps; (i) immersion of a ZnO film in an aqueous copper sulfate solution, and (ii) immersion in an aqueous potassium borohydride solution. The process is simpler than that developed by Yoshiki and Sun. The immersion time in copper sulfate solution was an important factor affecting the thickness and sheet resistivity of the resultant Cu layer. In this paper, the effects of the immersion time in copper sulfate solution on the structural and electrical characteristics of ZnO film were investigated with X-ray photoelectron spectroscopy, X-ray diffraction (XRD), and measurement of resistivity. Experimental A 100 nm thick ZnO film was chemically deposited on a nonconductive glass substrate (Corning no. 1737) by immersing the substrate in an aqueous solution containing 0.1 mol/L zinc nitrate hydrous and 0

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