(001)c-oriented 60–70-nm-thick SrIrO3 films with a high-pressure-stable perovskite phase were epitaxially grown on (100)SrTiO3 substrates by metalorganic chemical vapor deposition, and the crystal structure and the resistivity of the films were investigated. X-ray diffraction techniques including general θ–2θ scan, the rocking curve and high-resolution reciprocal space mapping, were used to determine crystal quality, lattice constant, and crystal structure of the SrIrO3 films. It was demonstrated that the film crystal structure was tetragonal distorted by strong mechanical constraints due to the in-plane matching with the lattice parameters of SrTiO3 substrates, and maintained almost the same unit cell volume as the reported one for the perovskite cubic SrIrO3 phase. The resistivity of the film at room temperature was 740 µΩ cm, and it decreased with decreasing temperature down to 100 K. Finally, an atomically flat surface was obtained on atomically stepped (100)SrTiO3 substrates.

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Epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 (PZT) films with a (100)∕(001) orientation and one and three in-plane variants were grown, respectively, on (100)cSrRuO3∕∕(100)SrTiO3 and (100)cSrRuO3∕∕(111)Pt∕∕(100)yttria stabilized zirconia (YSZ)∕∕(100)Si substrates by pulsed-metalorganic chemical vapor deposition, and their domain structure and electrical properties were investigated systematically. PZT films with the same volume fraction of c domains were grown on SrTiO3 and Si substrates by controlling the deposition temperature and film thickness. The relative dielectric constants at 1kHz were 370 and 450, respectively, for the films on the SrTiO3 and on the Si, even though both films had the same volume fractions, whereas the dielectric losses were almost the same. The remanent polarization and coercive field at the maximum applied electric field of 350kV∕cm were almost the same for both films, 30μC∕cm2 and 135kV∕cm, respectively. These results suggest that the key factor determining the ferroelectric property in epitaxial ferroelectric film is the relative volume fraction of c domains.

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