The relationship between chemical structure (N/Si ratio) or physical structure (laminate structure) of Si-rich nitride charge-trapping layer for MONOS and its electrical characteristics (Program/Erase window, fresh data retention and data retention after Program/Erase cycling stress) are investigated in detail. A laminate structure of Si-rich nitride has been developed that can realize a sufficient Program/Erase window and excellent data retention for MLC operation.

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The relationship between chemical structure (N/Si ratio) or physical structure (bilayer or laminate structure) of Si-rich nitride charge-trapping layer for metal-oxide-nitride-oxide-semiconductor (MONOS) type NAND flash memory and its electrical characteristics (including program/erase V th window, fresh cell data retention and data retention after program/erase cycling stress) are investigated in detail. A bilayer charge-trapping structure formed by two different composite Si-rich nitride films has been developed that can realize a sufficient program/erase window and excellent data retention characteristics for multi-level cell (MLC) operation. #

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