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Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV+0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175 °C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes.

A new and highly efficient catalytic system based on CpRuClL2 is proposed for the S-propargylation of thiols by propargylic carbonates under neutral conditions, in which specific requirements inherent to the different reactivities of aliphatic and aromatic thiols are achieved by tuning both the nature of the ancillary ligand L and the experimental conditions.

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We propose a novel standing technique of fabricating a high-aspect-ratio tip structure. The technique utilizes the bending of films induced by ion irradiation. Using this technique, the position and aspect ratio can be easily controlled by the conventional thin-film deposition and photolithography processes. We found that the standing is realized when ion energy is chosen at which the film internal stress at the medium depth of the film relaxes, while low- and high-energy irradiations simply bend up and bend down the film, respectively. We demonstrate the application of the thin-film standing technique to field emitter fabrication.