To achieve low on-state and switching losses simultaneously in SiC bipolar devices, the depth distribution of the carrier lifetime within the voltage blocking layer and the techniques used for observing the carrier lifetime distribution are important considerations. We developed a measurement system of the time-resolved free carrier absorption with intersectional lights (IL-TRFCA) for the nondestructive measurements of the depth distribution of the carrier lifetime in 4H–SiC thick epilayers. To confirm the reliability of the measurement results, we also performed TRFCA measurements to the cross section of the samples. As a result, although the lifetimes are underestimated owing to an inevitable diffusion of the carriers from the measurement region, the system was able to observe a carrier lifetime distribution up to a depth of 250 μm. Our IL-TRFCA system demonstrated a depth resolution of ∼10 μm, which is the best resolution among previously reported nondestructive measurement techniques. We consider the proposed system to be useful for the development of SiC bipolar devices.

No abstract

The carrier lifetime is an important parameter for high voltage SiC bipolar devices because its distribution in drift layers affects the device performance. Observation techniques for carrier lifetime, along with the development of carrier lifetime control processes, are important to control carrier lifetime distribution. In this study, we developed a microscopic time-resolved free carrier absorption system that has a variable spot size of excitation light and two different probe light wavelengths (405 and 637 nm). By selecting a relatively small spot size of excitation light and the probe light of shorter wavelength (405 nm), the distribution of carrier lifetime was observed with a high spatial resolution of ∼3 μm. Additionally, by using a relatively large spot size of excitation light and the probe light that leads to stronger free carrier absorption (637 nm), an accurate measurement of carrier lifetime was obtained. The developed system enables the design and development of bipolar SiC devices with carrier lifetime distribution control.

No abstract

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.