Articles you may be interested inParticipation of focused ion beam implanted gallium ions in metal-assisted chemical etching of silicon J. Vac. Sci. Technol. B 30, 040603 (2012); 10.1116/1.4732124 Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam Characteristics of submicron patterns fabricated by gallium focused-ion-beam sputtering J. Appl. Phys. 57, 159 (1985); 10.1063/1.335387Focused ion beam microlithography using an etch-stop process in gallium-doped silicon

Focused ion‐beam milling has recently been used for modifying and debugging LSIs, where precise depth control is required. In order to analyze the effects of scanning width and redeposition on hole depth, we have developed a two‐dimensional milling profile simulator, which takes redeposition into consideration. The results of the simulation are in good agreement with our experiments. It has been demonstrated that when the beam scanning width is less than the beam tail diameter, the milling depth declines due to dose deficiency. When the aspect ratio (depth/width) is high, the depth is less than proportional to the dose due to redeposition.

Direct observation of bombarding 5–15-keV Ga+ ion condensation on a Si target is achieved using a scanning ion microscope with a liquid-Ga ion source. The liquidlike pieces of condensed Ga move about easily to join or split. Condensation takes place beyond a critical ion dose, which is roughly explained by an implanted-ion build-up model.

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A Monte Carlo calculation procedure for simulating the scattering processes of an energetic ion in amorphous targets is given. This computer program can be extended to any ion-target combination up to several MeV incident energy. A high degree of simulation accuracy is obtained independently of incident energy within a reasonable amount of computer time at high as well as low incident energies. Good agreement is obtained in the comparison with calculated depth distributions for implanted ions with the experiments and other Monte Carlo results.