No abstract

The surface of 100 keV Se+-implanted GaAs was encapsulated with As-doped a-Si:H with a thickness of about 80 nm. The sheet carrier concentration in thermally annealed samples increased with an increase in the concentration of As atoms in the a-Si:H encapsulant. A high sheet carrier concentration of 0.65×1014 cm-2 can be achieved on GaAs which was implanted with a dose of 3.3×1014 cm-2 and annealed at 1000°C for 15 min after encapsulation with an As-doped a-Si:H film. Furthermore, the diffusion rate of the implanted Se atoms was reduced with an increase in the concentration of As atoms in the encapsulant.