No abstract

No abstract

Absrract: A high-performance power technology has been developed in which conventional SO1 lateral power device is merged with novel thick film technology in backside of its substrate, such as Silicon 00 Double Insulator (SODI) structure. In addition to realize a high breakdown voltage performance with the assumption of 1.2kV class application, SODI structure has mainly two advantages.One is a low cost-performance of the initial SO1 substrate can be done, because a design of initial buried oxidation layer thickness is free. Another one is a huge reduction in beat resistance of the power device can be done, because a back metal electrode is formed just ooder the device.

The growing demand for high-speed, low-cost, and low-overhead I/Os in today's electronic systems, has been addressed by three general categories of interconnects: electrical, optical, and wireless. The electrical interconnects are the oldest and have improved the most, where bit rates in excess of 20Gb/s are achieved over a pair of conductors [1]. At such high bit rates, these serial links must handle transmission line loss, dispersion, impedance mismatches, and electromagnetic crosstalk among multiple lines requiring sophisticated designs, often needing equalization, with their own cost and overhead limitations [2]. Optical fibers as interconnects do not suffer from similar bandwidth limitations or cross-talk issues. However, they require additional electrical-to-optical (EO) and optical-toelectrical (OE) conversion devices for generation and detection of optical signals [3], which impose serious constraints on power consumption, cost, and footprint of optical interconnects. Wireless connection at millimeter-wave frequencies can also be used for short distance connections [4]. While they provide the most versatility and are a promising option, additional development is still necessary to scale them to a highly parallel system with multiple channels running concurrently.This paper presents a 12.5+12.5Gb/s full-duplex plastic waveguide interconnect solution based on millimeter-wave signal transmission. The plastic waveguide is simply a long solid piece of plastic that provides a very simple, versatile, flexible, and low-cost transmission medium that has the main advantages of optical fiber in isolation and bandwidth, without the need for costly EO and OE. The dielectric waveguide does not need to be connected electrically like the wire or aligned to micron-level accuracy like optical fibers. It can be bent and twisted without significant impact on the signal. Compared to the wireless link discussed earlier, it offers additional signal isolation and confinement. Thus, it can be extended over much longer distances due to the low attenuation in the waveguide (as opposed to free space) and multiple independent lines can be run in parallel to increase the bandwidth.In our proposed plastic waveguide link, the TXs and RXs are fully integrated in CMOS, and the waveguide couplers can be fabricated in a conventional resin package without additional cost. In our existing setting there are a transmitter and a receiver operating at different carrier frequencies on each side of the waveguide, making it possible to realize a full-duplex solution. Because of the smaller fractional bandwidth for the millimeter-wave transmission, no equalization circuit is required. Figure 8.5.1 presents a diagram of our proposed solution. It consists of a pair of transceivers A and B, and a plastic waveguide. Transceiver A contains a 57GHz RX and an 80GHz TX, and Transceiver B contains an 80GHz RX and a 57GHz TX. This combination allows for a bi-directional full-duplex transmission. An alternative is to place both TX on one side and both RX on the...

While the setup is still being optimized during daytime, first data has been collected during nights and week-ends over a period spanning 6 weeks. For each of 22 data blocks, one shown in Fig. 3 we remove a linear drift of -I H d h and fit to eq. (1). Analyzing the distribution ofthe fit results, we find an isotropy violation signal of (4.39 ? 0.58) Hz (Fig. 2). As preliminary r e d t ,we thur obtain IBI = ( 8 . 7 ? 1 3 ) . 1 0~1 0 .( 2)This limit has an uncertainty about three times smaller than the best previous test.' Future developments will include operation at an optimized rotation rate and a new setup using crossed (monolithic) COP& within a single block of crystalline material. This should ultimately lead to an improvement of another two orders of magnitude over the present setup.Since the first observation of ground-state lasing in quantum wire lasers,' many-body electron interactions and lasing mechanism in one-dimensional (1-0) wire lasers have been the central issues of our interest. Questions about existence of band-gap renormalization and contribution of excitons to gain in laring have been hotly argued but remains &olved for about a decade. Here, we study these problems by means of recently achieved highly-uniform T-shaped quantum wires (T-wires) of 14 nm x 6 nm cross-sectional size and lasers containing these T-wires. Highly uniform GaAs T-wires are fabricated by the cleaved-edge overgrowth method with molecular-beam epitaxy refined by a recently developed annealing technique' which dramatically improver (110) interface uniformity in T~wires.Interruption of the 4 9 0 T epitaxial GaAs overgrowth by a 10 minute anneal at 600'C under an As, overpressure produces an atomically-flat surface free of monolayer step edges over areas measuringseveral tensoipm.As a result,photoluminescence (PL) linewidth of present T-wires are typically I meV, which is about a factor of 1/10 sharper than that of previous T-wires. ' Then, we studied PL of modulation-doped single T-wire structures with tunable I-D electron density by electrical gating to study manybody electron interaction effects. It shows PL of I-D neutral excitons and charged excitons at low densities, which evolve^ as thedenrityinueases to band-to-band optical recombination of single holes and an electron plasma with significant band-gap renormalization?In undoped twenty-T-wire samples, we found clearsignaturesof I-Dfreeexcitonsand I-Dcantinuum States in PLE spectra, and biwitons and electron-hale plasma emission in stronglyWe then studiedlasingproperties oftwenty-Twire laser samples with 500 pm long cavity and uncoated mirrorsvia optical pumping. Threshold pumping power for lasing is about 5 mW at 5 K. Lasing by T-wires is observed up to about 100 K.Lasing energy is not at the free w i t o n energy, but at the low-energytail of biexcitons. Therefore, origin of gain for lasing is attributed not to free ex& tons, but most probably to biexcitons.Very recently, a single-T-wire laser has also been realized and its detailed study is in progress.Chemical synt...