The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

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Inorganic conductometric gas sensors struggle to overcome limitations in high power consumption and poor selectivity. Herein, recent advances in developing self-powered gas sensors with tunable selectivity are introduced. Alternative general approaches for powering gas sensors were realized via proper integration of complementary functionalities (namely; powering and sensing) in a singular heterostructure. These solar light driven gas sensors operating at room temperature without applying any additional external powering sources are comparatively discussed. The TYPE-1 gas sensor based on integration of pure inorganic interfaces (e.g. CdS/n-ZnO/p-Si) is capable of delivering a self-sustained sensing response, while it shows a non-selective interaction towards oxidizing and reducing gases. The structural and the optical merits of TYPE-1 sensor are investigated giving more insights into the role of light activation on the modulation of the selfpowered sensing response. In the TYPE-2 sensor, the selectivity of inorganic materials is tailored through surface functionalization with self-assembled organic monolayers (SAMs). Such hybrid interfaces (e.g. SAMs/ZnO/p-Si) have specific surface interactions with target gases compared to the non-specific oxidation-reduction interactions governing the sensing mechanism of simple inorganic sensors. The theoretical modeling using density functional theory (DFT) has been used to simulate the sensing behavior of inorganic/organic/gas interfaces, revealing that the alignment of organic/gas frontier molecular orbitals with respect to the inorganic Fermi level is the key factor for tuning selectivity. These platforms open new avenues for developing advanced energy-neutral gas sensing devices and concepts.