Several generations of high power, lateral, linear mode, intrinsically triggered 4H-SiC photoconductive semiconductor switch designs and their performance are presented. These switches were fabricated from high purity semi-insulating 4H-SiC samples measuring 12.7 mm × 12.7 mm × 0.36 mm and were able to block dc electric fields up to 370 kV/cm with leakage currents less than 10 μA without failure. Switching voltages and currents up to 26 kV and 450 A were achieved with these devices and ON-state resistances of 2 were achieved with 1 mJ of 355 nm laser energy (7 ns FWHM). After fewer than 100 high power switching cycles, these devices exhibited cracks near the metal/SiC interface. Experimental and simulation results investigating the root cause of this failure mechanism are also presented. These results strongly suggest that a transient spike in the magnitude of the electric field at the metal/SiC interface during both switch closing and opening is the dominant cause of the observed cracking.

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This paper discusses a compact high voltage curve tracer for high voltage semiconductor device characterization. The system sources up to 3 mA at up to 45 kV in dc conditions. It measures from 328 V to 60 kV with 15 V resolution and from 9.4 pA to 4 mA with 100 fA minimum resolution. Control software for the system is written in Microsoft Visual C# and features real-time measurement control and IV plotting, arc-protection and detection, an electrically isolated universal serial bus interface, and easy data exporting capabilities. The system has survived numerous catastrophic high voltage device-under-test arcing failures with no loss of measurement capability or system damage. Overall sweep times are typically under 2 min, and the curve tracer system was used to characterize the blocking performance of high voltage ceramic capacitors, high voltage silicon carbide photoconductive semiconductor switches, and high voltage coaxial cable.

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