The real and imaginary parts of the dielectric function of VO2 thin films, deposited on r-plane sapphire via pulsed laser deposition, are measured by means of visible-infrared ellipsometry for wavelengths ranging from 0.4 to 15 μm and temperatures within its phase transition. For both the insulator-to-metal (heating) and metal-to-insulator (cooling) transitions, it is shown that the two ellipsometric signals exhibit three temperature-driven behaviors, which are well described by appropriate combinations of the Tauc-Lorentz, Gaussian, and Drude oscillator models. By fitting Bruggeman's effective medium model for the dielectric function to the corresponding measured experimental values, using the volumetric fraction of the VO2 metallic domains as a fitting parameter for different temperatures within the VO2 phase transition, we have found that this model is suitable for describing the dielectric function in visible and near-infrared wavelengths (∼0.4 to ∼3.0 μm), but it generally fails for longer infrared ones. Furthermore, the hysteresis loop of the VO2 emissivity averaged over a relevant interval of wavelengths is determined and shown to vary from ∼0.49, in the insulator phase, to ∼0.16, in the metallic one. These values, based on the VO2 dielectric function, are consistent with previous measurements reported in the literature, and therefore, our measured data are expected to be useful for describing the behavior of VO2 films involved in optical and radiative applications.

In this paper, we report the fabrication of porous and crystalline tin-doped indium oxide (ITO) thin films at room temperature by ion beam sputtering deposition at oblique angles using either argon or xenon ions. Deep insights into these systems are provided by coupling nanostructural (scanning and transmission electron microscopies, X-ray diffraction) and optical (spectroscopic ellipsometry, spectral reflectometry) characterizations. This original approach allows extracting important features of the films (porosity, refractive indexes, in-grain carrier densities, and mobilities) not easy to reach locally by other techniques. We propose a model decomposing the complex film's nanostructure into two layers presenting different electro-optical properties, which are attributed to the shadowing effect, but also to the presence of growth defects and impurities due to the atomic peening. In particular, we demonstrate that ITO films deposited with Xe present a better crystallinity and larger porosity, providing superior in-grain carrier transport and offering more flexibility to design broad-band low-reflectivity surfaces. These results widen the possibilities to engineer transparent and conductive thin films at room temperature with enhanced properties, especially in the near-infrared range where oblique angle deposition allows a reduction of reflectivity even at high doping.