Molecular doping has recently been shown to improve the operating characteristics of organic photovoltaics (OPVs). Here, we prepare neutral Diquat (DQ) and use it as n-dopant to improve the performance of state-of-the-art OPVs. Adding DQ in ternary bulk-heterojunction (BHJ) cells based of PM6:Y6:PC 71 BM is found to consistently increase their power conversion efficiency (PCE) from 16.7 to 17.4%. Analyses of materials and devices reveal that DQ acts as n-type dopant and morphology modifier for the BHJ leading to observable changes in its surface topography. The resulting n-doped BHJs exhibit higher optical absorption coefficients, balanced ambipolar transport, longer carrier lifetimes and suppressed bimolecular recombination, which are ultimately responsible for the increased PCE. The use of DQ was successfully extended to OPVs based on PM6:BTP-eC9:PC 71 BM for which a maximum PCE of 18.3% (uncertified) was achieved. Our study highlights DQ as a promising dopant for application in next generation organic solar cells.

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping−processing−nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

The working principle of semiconductor:insulator blends are discussed, examining the different approaches that have recently been reported in literature.

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW -1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW -1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

It is well established that for organic photodetectors (OPD) to compete with their inorganic counterparts, low dark currents at reverse bias must be achieved. Here, two rhodanine terminated nonfullerene acceptors O-FBR and O-IDTBR are shown to deliver low dark currents at -2V of 0.17 nAcm -2 and 0.84 nAcm -2 , respectively when combined with the synthetically scalable polymer PTQ10 in OPD. These low dark currents contribute to the excellent sensitivity to low light of the detectors, reaching values of 0.21 μWcm -2 for PTQ10:O-FBR-based OPD and 0.57 μWcm -2 for PTQ10:O-IDTBR-based OPD. In both cases, this sensitivity exceeds that of a commercially available silicon photodiode. The responsivity of the PTQ10:O-FBR-based OPD of 0.34 AW -1 under a reverse bias of -2V also exceeds that of a silicon photodiode. Meanwhile, the responsivity of the PTQ10:O-IDTBR of 0.03 AW -1 is limited by the energetic offset of the blend. The OPDs deliver high specific detectivities of 9.6x10 12 Jones and 3.3x10 11 Jones for O-FBR and O-IDTBR-based blends, respectively. Both active layers are blade-coated in air, making them suitable for high-throughput methods.Finally, all three of the materials can be synthesised at low cost and on a large scale making these blends good candidates for commercial OPD applications.