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Bi Fe O 3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)∕Ti∕SiO2∕Si substrates after annealing at 500°C for 2h. The film grown in the (100) direction presented a remanent polarization Pr of 31μC∕cm2 at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60–70μC∕cm2, ΔP=(P*−P̂). Low leakage conduction and an out-of-plane piezoelectric (d3) coefficient of 40pm∕V were obtained by the improvement of preparation technology.

BiFeO 3 ͑BFO͒ thin films were fabricated on Pt͑111͒ / Ti/ SiO 2 / Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500°C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500°C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations.

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