III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the cost of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on the nonpolar Si substrate and called antiphase domains (APDs) offer a unique way to engineer the second-order properties of the semiconductor compound. Here we demonstrate the fabrication of microdisk resonators at the interface between a gallium-phosphide layer and its silicon substrate. The analysis of the whispering gallery mode quality factors in the devices allows the quantitative assessment of losses induced by a controlled distribution of APDs in the GaP layer and demonstrates the relevance of such a platform for the development of polarity-engineered III-V nonlinear photonic devices on silicon.

Second-order nonlinearities in whispering gallery mode resonators are highly investigated for their many applications such as wavelength converters, entangled photon sources, and generation of frequency combs. In such systems, depending on the material under scrutiny, the derivation of quasi-phase matching equations can lead to the appearance of additional quanta in the selection rule on the azimuthal confinement order. Here, we demonstrate that these additional quanta show up due to the Berry phase experienced by the transverse spin angular momentum components of the whispering gallery modes during their circulation within the resonator. We first detail the case of Zinc-blende materials and then generalize this theory to other crystal symmetries relevant for integrated photonics

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