The functionality of soft contact lenses depends strongly on the water content and their water-transport ability. This study was conducted in order to examine the state of water in two sets of soft contact lenses: VSO38, pHEMA Filcon I 1, and VSO50, copolymer of HEMA and VP Filcon II 1 (HEMA = 2-hydroxy-ethyl methacrylate; VP = vinyl pyrrolidone). Hydrogel lenses were studied using near-infrared spectroscopy and the novel Aquaphotomics approach in order to determine the state of water in materials based on their near-infrared spectra. Aquaphotomics approach investigates absorption at specific vibrational bands of water’s covalent and hydrogen bonds which can provide information on how the water structure changes with the structural change of the polymer network. Principal component analysis and specific star-chart “aquagram” were used to analyse water spectral pattern in hydrogel materials. The findings show that material VSO38 has water predominantly organized in bound state, while material with higher water content, VSO50, has more free and weakly hydrogen bonded water. Our findings define in detail exact water species existing and interacting with the polymer network. The results show qualitative and quantitative possibilities of Aquaphotomics for better modelling and understanding water behaviour in hydrogel materials.

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cil i ties of Ser bia, Bel grade, Ser bia 2 Fac ulty of Me chan i cal En gi neer ing, Uni ver sity of Bel grade, Bel grade, Ser bia 3 Tech ni cal Col lege ^a~ak, ^a~ak, Ser bia Sci en tific pa per

The aim of this paper is to explore the impact of increased gamma and neutron radiation on the PIN photodiodes and phototransistors and their output characteristics. Special attention was paid to the successive impact of gamma and neutron radiation when the components were located in the field of gamma radiation and after that in the field of neutron radiation. The impact of successive irradiation was compared with the influence of gamma and neutron radiation when they appear individually. An important result of this research is the observation that neutron irradiation of photovoltaic detectors, applied after gamma irradiation, leading to partial reparations of distorted semiconductor structure and increasing disrupted output characteristics (photocurrent, spectral response). Monte Carlo simulation of gamma photons transfer through the crystal lattice of the semiconductor has been shown that the cause of such effect of neutron radiation is a large number of divacancies caused by successive operation of the previous gamma radiation and the neutron radiation itself. Divacancies have created the basis for increased generation of charge carriers by direct transfer (tunneling) of carriers through the traps (recombination centers). This is so called intercenter charge transfer.

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