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Indentation of a square elastomeric thin film by a flat-ended cylindrical punch in the presence of long-range intersurface forces Silicone rubber films with graded and localized mechanical properties are prepared using two-part polydimethylsiloxane (PDMS) elastomer, photoinhibitor compounds and conventional photolithography. First the un-cross-linked PDMS is mixed with benzophenone. The resulting positive photosensitive material is then exposed through a mask to UV light from a conventional mask aligner. Cross-linking of the UV exposed elastomer is inhibited, leading to softer regions than the surrounding unexposed matrix. By empirically fitting the nonlinear, hyperelastic Mooney-Rivlin model to experimentally measured stress-strain curves we determine the equivalent tensile modulus (E) of the rubber film. We show the PDMS tensile modulus can then be adjusted in the 0.65-2.9 MPa range by decreasing the UV exposure dose (from 24 000 to 0 mJ cm À2 ). Further, using a patterned UV mask, we can locally define differential regions of tensile modulus within a single PDMS rubber film. We demonstrate that "hard islands" (E % 2.9 MPa) of 100 lm minimum diameter can be patterned within a 100-lm-thick, single "soft" PDMS rubber membrane (E % 0.65 MPa) cured at 150 C for 24 h. Thin gold film conductors patterned directly onto the photopatterned PDMS are stretchable and withstand uniaxial cycling to tens of percent strain. The mechanically "pixellated" PDMS rubber film provides an improved substrate with built-in strain relief for stretchable electronics.

XPS determination of the oxygen coefficient k O =2+x and ionic (U 4+ , U 5+ and U 6+ ) composition of oxides UO 2+x formed on the surfaces of differently oriented (hkl) planes of thin UO 2 films on LSAT (Al 10 La 3 O 51 Sr 14 Ta 7 ) and YSZ (yttria-stabilized zirconia) substrates was performed. The U 4f and O 1s core-electron peak intensities as well as the U 5f relative intensity before and after the 129 Xe 23+ and 238 U 31+ irradiations were employed. It was found that the presence of uranium dioxide film in air results in formation of oxide UO 2+x on the surface with mean oxygen coefficients k O in the range 2.07-2.11 on LSAT and 2.17-2.23 on YSZ substrates. These oxygen coefficients depend on the substrate and weakly on the crystallographic orientation.On the basis of the spectral parameters it was established that uranium dioxide films AP2,3 on the LSAT substrates have the smallest k O values, and from the XRD and EBSD results it follows that these samples have a regular monocrystalline structure. The XRD and EBSD results indicate that samples AP5-7 on the YSZ substrates have monocrystalline structure, however, they have the highest k O values. The observed difference in the k O values, probably, caused by the different nature of the substrates: the YSZ substrates provide 6.4% compressive strain, whereas (001) LSAT substrates result only in 0.03% tensile strain in the UO 2 films.129 Xe 23+ irradiation (92 MeV, 4.8 × 10 15 ions/cm 2 ) of uranium dioxide films on the LSAT substrates was shown to destroy both long range ordering and uranium close environment, which results in increase of uranium oxidation state and regrouping of oxygen ions in uranium close environment. 238 U 31+ (110 MeV, 5 × 10 10 , 5 × 10 11 , 5 × 10 12 ions/cm 2 ) irradiations of uranium dioxide films on the YSZ substrates were shown to form the lattice damage only with partial destruction of the long range ordering.3

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