It is well known that multilevel converters can offer significant benefits in terms of harmonic performance and reduced switching losses compared to their two-level counterparts. However, for lower voltage applications the Neutral-Point-Clamped (NPC) inverter suffers from relatively large semiconductor conduction losses because the output current always flows through two switching devices. In contrast, the T-Type multilevel inverter has less conduction losses because only a single outer loop switching device is required to connect the converter output to the upper and lower DC buses, albeit at the expense of increased switching losses since these outer switches must now block the full DC link voltage. Silicon Carbide (SiC) MOSFET devices potentially offer substantial advantage in this context with their lower switching losses, but the benefit of replacing all switching devices in a T-Type inverter with SiC MOSFETs is not so clear-cut. This paper now explores this issue by presenting a detailed comparison of the use of Si and SiC devices for a three-level T-Type inverter operating in grid-tie applications. The study uses datasheet values, switching loss measurements and calibrated heat sink thermal measurements to precisely compare semiconductor losses for these two alternatives for a T-Type inverter operating at or near unity power factor. The results show that replacing only the DC bus connection switches with SiC devices significantly reduces the semiconductor losses, allowing either the converter power level or the switching frequency to be significantly increased for the same device losses. Hence the use of SiC MOSFETS for T-Type inverters can be seen to be an attractive and potentially cost effective alternative, since only two switching devices per phase leg need to be upgraded.

Abstract-This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate resistance and loop inductances. With total switching energy of 340.24 µJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97.7 % is reached.

Abstract-This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial SiC T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200 V primary Si IGBT switches with lower loss 1200 V SiC MOSFETs. The second solution strategically adds 600 V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.

Abstract-This paper presents a nonisolated Three Port Converter (TPC) with a unidirectional port for photovoltaic (PV) panels and a bidirectional port for energy storage. With the proposed topology single power conversion is performed between each port, so high efficiencies are obtained. A theoretical analysis is carried out to analyze all operating modes and design considerations with the main equations are given. A 4kW laboratory prototype is developed and tested under all operating conditions. Results obtained feature on efficiencies higher than 97% for all operating modes and all power levels from light load to full load.

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