This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs). The proposed level 2 charger has a two-stage architecture where the first stage is a bridgeless boost ac-dc converter and the second stage is a phaseshifted full-bridge isolated dc-dc converter. The operation of both topologies is presented and the specific advantages gained through the use of SiC power devices are discussed. The design of power stage components, the packaging of the multichip power module, and the system-level packaging is presented with a primary focus on system density and a secondary focus on system efficiency. In this work, a hardware prototype is developed and a peak system efficiency of 95% is measured while operating both power stages with a switching frequency of 200 kHz. A maximum output power of 6.1 kW results in a volumetric power density of 5.0 kW/L and a gravimetric power density of 3.8 kW/kg when considering the volume and mass of the system including a case.Index Terms-AC-DC power converters, battery charger, dc-dc power converters, electric vehicles (EVs), power electronics, silicon carbide (SiC).

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A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.Index Terms-Gate buffer, gate driver, high-temperature electronics, silicon carbide (SiC), 4H-SiC.

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