Fabrication and testing of micro-reactors for the characterization of nanosensors is presented in this work. The reactors have a small volume (100 μl) and are equipped with gas input/output channels. They were machined from a single piece of kovar in order to avoid leaks in the system due to additional welding. The contact pins were electrically insulated from the body of the reactor using a borosilicate sealing glass and the reactor was hermetically sealed using a lid and an elastomeric o-ring. One of the advantages of the reactor lies in its simple assembly and ease of use with any vacuum/gas system, allowing the connection of more than one device. Moreover, the lid can be modified in order to fit a window for in situ optical characterization. In order to prove its versatility, carbon nanotube-based sensors were tested using this micro-reactor. The devices were fabricated by depositing carbon nanotubes over 1 μm thick gold electrodes patterned onto Si/SiO(2) substrates. The sensors were tested using oxygen and nitrogen atmospheres, in the pressure range between 10(-5) and 10(-1) mbar. The small chamber volume allowed the measurement of fast sensor characteristic times, with the sensors showing good sensitivity towards gas and pressure as well as high reproducibility.

Electrical characteristics of multi-walled carbon nanotubes (MWNTs) grown by chemical vapor deposition have been investigated as a function of the bias voltage, nanotubes length and temperature, in 2 and 4 terminal configurations. Nanotubes were deposited over metal electrodes using ac dielectrophoresis method. For better contacts between the nanotubes and electrodes, Ni and Pd films were deposited by an electroless deposition technique. Differential conductance was found to rise considerably with bias, and this effect was more pronounced for Ni. Using 2 and 4 terminal configurations, electrical resistance measurements for individual MWNTs were performed, and the results were interpreted using the model of nanotube as a resistive transmission line, where current at low bias flows mainly through the two outermost shells.

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Ni electroless films were used as a material for hard mask during high-density ICP plasma etching. The results have shown that under the plasma exposure strong hardening of the mask occurs and the rate of Ni film removal falls at least an order of magnitude as compared with its initial value. Therefore, very high selectivities for Si etching over Ni are obtained, allowing for very deep etching required for some MEMS applications.