The beneficial element silicon (Si) may affect radial oxygen loss (ROL) of rice roots depending on suberization of the exodermis and lignification of sclerenchyma. Thus, the effect of Si nutrition on the oxidation power of rice roots, suberization and lignification was examined. In addition, Si-induced alterations of the transcript levels of 265 genes related to suberin and lignin synthesis were studied by custom-made microarray and quantitative Real Time-PCR. Without Si supply, the oxidation zone of 12 cm long adventitious roots extended along the entire root length but with Si supply the oxidation zone was restricted to 5 cm behind the root tip. This pattern coincided with enhanced suberization of the exodermis and lignification of sclerenchyma by Si supply. Suberization of the exodermis started, with and without Si supply, at 4–5 cm and 8–9 cm distance from the root tip (drt), respectively. Si significantly increased transcript abundance of 12 genes, while two genes had a reduced transcript level. A gene coding for a leucine-rich repeat protein exhibited a 25-fold higher transcript level with Si nutrition. Physiological, histochemical, and molecular-biological data showing that Si has an active impact on rice root anatomy and gene transcription is presented here.

We studied the effect of Silicon (Si) on Casparian band (CB) development, chemical composition of the exodermal CB and Si deposition across the root in the Si accumulators rice and maize and the Si non-accumulator onion. Plants were cultivated in nutrient solution with and without Si supply. The CB development was determined in stained root cross-sections. The outer part of the roots containing the exodermis was isolated after enzymatic treatment. The exodermal suberin was transesterified with MeOH/BF3 and the chemical composition was measured using gas chromatography-mass spectroscopy (GC-MS) and flame ionization detector (GC-FID). Laser ablation-inductively coupled plasma-mass spectroscopy (LA-ICP-MS) was used to determine the Si deposition across root cross sections. Si promoted CB formation in the roots of Si-accumulator and Si non-accumulator species. The exodermal suberin was decreased in rice and maize due to decreased amounts of aromatic suberin fractions. Si did not affect the concentration of lignin and lignin-like polymers in the outer part of rice, maize and onion roots. The highest Si depositions were found in the tissues containing CB. These data along with literature were used to suggest a mechanism how Si promotes the CB development by forming complexes with phenols.

Silicon (Si) reduces arsenic (As) levels in rice shoot and grain. However, the underlying mechanisms remain unclear. In this study, we examined the effect of Si application to three rice paddy soils on the dynamics of Si, iron (Fe), phosphorus (P), and As in the soil solution, As accumulation in rice straw, flag leaf, husk, brown rice, and polished rice, and on As speciation in polished rice. Silicon application to soil increased the concentrations of Si, Fe, As, and P in the soil solution, while the redox potential was unaffected. Arsenic concentrations of straw, flag leaf, and husk were reduced by half by Si application, while As concentrations of brown and polished rice were decreased by 22%. The main As species in polished rice was arsenite, As(III), with a fraction of 70%, followed by dimethylarsinic acid (DMA) and arsenate, As(V), with 24% and 6%, respectively. Silicon application to the soil did not affect DMA or As(V) concentration of polished rice, while the As(III) concentration was reduced by 33%. These results confirm that Si reduces As(III) uptake and translocation into the shoot. Furthermore, data indicate that decrease of As concentration of polished rice is due to decreased As(III) transport into grain. Possible underlying mechanisms are discussed.

Silicon (Si) promotes the formation of Casparian bands (CB) in rice and reduces radial oxygen loss (ROL). Further transcriptomic approaches revealed several candidate genes involved in the Si-induced formation of CB such as ATP binding cassette (ABC) transporter, Class III peroxidases, ligases and transferases. Investigation of these genes by means of overexpression (OE) and knockout (KO) mutants revealed the contribution of the ABC transporter (OsABCG25) to CB formation in the exodermis, which was also reflected in the expression of other OsABCG25 in the Si-promoted formation of CB genes related to the phenylpropanoid pathway, such as phenylalanine-ammonia-lyase, diacylglycerol O-acyltransferase and 4-coumarate-CoA ligase. Differential CB development in mutants and Si supply also affected the barrier function of the exodermis. OE of the ABC transporter and Si supply reduced the ROL from roots and Fe uptake. No effect on ROL and Fe uptake could be observed for the KO mutant. The presented research confirms the impact of the OsABCG25 in the Si-promoted formation of CB and its barrier functions.

An interpretation of solid surfaces is generated based on physical considerations and the laws of thermodynamics. Like the widely used Owens–Wendt (OW) method, the proposed method uses liquids for characterization. Each liquid provides an absolute lower bound on the surface energy with some uncertainty from measurement variations. If multiple liquids are employed, the largest lower bound is taken as the most accurate, with uncertainty due to measurement errors. The more liquids used, the more accurate is the greatest lower bound. This method links generalizations of the Good–Girifalco equation with a general thermodynamic inequality relating the three‐interfacial tensions in a three‐phase equilibrium system. The method always satisfies this inequality with better than a 65% certainty. However, the OW seldom, if ever, conforms to this inequality and even then, the degree of satisfaction is insignificant. A reconciliation of the two methods is proposed based on rescaling the OW surface energies to conform to the inequality. This enables interpretations of dispersion and polar components of the surface energy, which are thermodynamically self‐consistent. The proposed method is also capable of dealing with material exchange between liquid and solid phases, when the surface tension and contact angle of the saturated liquids can be measured.