We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdSe nanoplatelets with thicknesses of 3, 4 and 5 monolayers are chosen for experimental demonstrations. The bright-dark splitting of excitons varies from 3.2 to 6.0 meV and is inversely proportional to the nanoplatelet thickness. Good agreement between experimental and theoretically calculated size dependence of the bright-dark exciton slitting is achieved. The recombination rates of the bright and dark excitons and the bright to dark relaxation rate are measured by time-resolved techniques.
The
low-temperature emission spectrum of CdSe colloidal nanoplatelets
(NPLs) consists of two narrow lines. The high-energy line stems from
the recombination of neutral excitons. The origin of the low-energy
line is currently debated. We experimentally study the spectral shift,
emission dynamics, and spin polarization of both lines at low temperatures
down to 1.5 K and in high magnetic fields up to 60 T and show that
the low-energy line originates from the recombination of negatively
charged excitons (trions). This assignment is confirmed by the NPL
photocharging dynamics and associated variations in the spectrum.
We show that the negatively charged excitons are considerably less
sensitive to the presence of surface spins than the neutral excitons.
The trion binding energy in three-monolayer-thick NPLs is as large
as 30 meV, which is 4 times larger than its value in the two-dimensional
limit of a conventional CdSe quantum well confined between semiconductor
barriers. A considerable part of this enhancement is gained by the
dielectric enhancement effect, which is due to the small dielectric
constant of the environment surrounding the NPLs.
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