We report on metal-organic vapor phase epitaxial growth of (112¯2) InN on (112¯2) GaN templates on m-plane (101¯0) sapphire substrates. The in-plane relationship of the (112¯2) InN samples is [1¯1¯23]InN||[0001]sapphire and [11¯00]InN||[12¯10]sapphire, replicating the in-plane relationship of the (112¯2) GaN templates. The surface of the (112¯2) InN samples and the (112¯2) GaN templates shows an undulation along [11¯00]InN,GaN, which is attributed to anisotropic diffusion of indium/gallium atoms on the (112¯2) surfaces. The growth rate of the (112¯2) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (112¯2) InN layers and the (112¯2) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (112¯2) GaN templates but they were terminated at the InN/(112¯2) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (112¯2) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (112¯2) InN sample, indicating an In-polar (112¯2) InN. The valence band maximum was determined to be at (1.7 ± 0.1) eV for the (112¯2) InN sample, comparable to In-polar c-plane InN.

The properties of superlattices consisting of 2 monolayer wide CdTe insertions into ZnTe spacer barriers with thickness ranging from 3 to 75 monolayers are investigated by means of transmission electron microscopy and photoluminescence spectroscopy. We show that quasi zero-dimensional CdTe islands form in this highly lattice-mismatched system. For spacer thickness smaller than 25 monolayers, the islands are vertically correlated along the axis tilted by 40° with respect to the growth direction, while for thicker ZnTe spacers no correlation is observed. The electronic coupling between the correlated islands manifests itself by the appearing of an additional emission band at energies lower to those corresponding to uncorrelated dots. The optical spectroscopy data reveal zero-dimensional localization of excitons by the electronically coupled islands. The decay time of the excitonic recombination is found to be over an order of magnitude longer in the case of the coupled islands than in the case of isolated ones.

The aim was to compare the blastocyst stages of red deer embryos in respect of in vitro fertilization (IVF) efficiency, morphology, apoptotic and proliferative abilities, and antioxidative potential according to the reproductive status of hinds. We used three experimental groups, including the ovaries collected post mortem on the 4th and 13th days of the estrous cycle and during pregnancy (n = 18). After oocyte maturation, frozen-thawed epididymal semen was used for IVF. Blastocyst quality, apoptotic potential by determining the mRNA expression of BAX, BCL-2, OCT4, SOX2, and placenta-specific 8 gene (PLAC8), and antioxidative potential of blastocysts were evaluated by determining the mRNA expression of CuSOD, MnSOD, and GPX as well as the enzymatic activity of superoxide dismutase and reduced glutathione. The highest development rate of expanded blastocyst, mRNA expression of BCL-2, OCT4, SOX2, and PLAC8 and mRNA expression and enzymatic activity of the antioxidative factors increased (p < 0.05) in blastocysts developed from the oocytes collected on the 4th day, compared to those developed from the oocytes collected on the 13th day of the cycle and during pregnancy. Our study indicates that the 4th day of the estrous cycle is the most effective period for oocyte collection for IVF and embryo development in hinds, considering quality parameters and antioxidative potential of the blastocysts.