Glasses in the series 30MgSO4-(70-x) P2O5-xSm2O3 0.2 ≤ x ≤1.0 mol percent were prepared by single step melt-quench techniques, the structure, physical and optical properties of samarium oxide at different concentrations were studied. The amorphous phase of the samples was verified by X-ray diffraction spectroscopy, the structural units were investigated using Fourier Transform Infrared, Raman and NMR spectroscopy where the spectra reveal the presence of symmetric, asymmetric, torsoional and bending vibration of phosphate groups, the NMR spectra reveals the changes in Q n distribution here discussed, the compositional dependence on physical (density, average molar weight, dielectric constant, Inter-nuclear distance, Field strength, Molar volume, Molar refractivity etc) and optical parameters were determined. In terms of structural modifications, there is variation of density and molar volume, the glass sample has increasing refractive index values with decreasing molar volume content. The luminescence spectra were observed within UV-Vis-NIR region, the absorption spectra of the sample were recorded in the range of 350 to 1800 nm meanwhile, absorption edge the optical band-gap, and ∆E was evaluated. Our result may be advantageous for many optical applications (e.g visible lasers or color displays).

In order to overcome the disadvantages of magnesium hydride (MgH2) towards its applications in solar cell science and technology, doping with non-metals such as Fluorine (F) doping is a promising approach to tune its large band gap. In order to expose the hidden potential in F doped MgH2, details analysis of electronic and optical absorptions is needed. Theoretical calculations of structural, electronic and optical properties of F doped MgH2 are studied using first-principles approach within density functional theory (DFT) framework. The calculated lattice constants with PBE-GGA are in better agreement with experimental result. The bandgap value of 3.34 eV for the undoped MgH2 is close to experimental value. When one atom of F is introduced into MgH2 at Mg site, the doping effects modified the band gap from 3.34 to 2.72 eV. Also, by introducing one atom of F to H site, the band gap value reduced to 1.59 eV. Our findings confirmed that non-metal doping narrow the energy band gap of semiconductor materials. The results of optical absorptions indicate that F doped MgH2 at H has strong absorption behavior in the visible light frequency, which depicts its suitability for solar cell applications.