To assess the suitability of bismuth germanate as an electro-optic material for high precision applications, we have confirmed and extended previous data on its refractive index, electro-optic tensor element r(41), and thermal expansion coefficient. In addition, we have measured the thermo-optic coefficient dn/dT, the temperature dependence of the electro-optic coefficient, and the stress-optic tensor elements. From the stress-optic tensor elements and previously published data, we have computed the strain-optic tensor elements. The index of refraction is given, to a good approximation, by the single-term Sellmeier equation, n(2) - 1 = S(0)λ(0)(2)/[1 - (λ(0)/λ)(2)], with S(0) = 95.608 µm(-2) and λ(0) = 0.1807 µm. The thermo-optic coefficient is 3.9 × 10(-5)/°C at 632.8 nm and 3.5 × 10(-5)/°C at 1152.3 nm. The electro-optic tensor element varies between approximately 1.05 and 1.11 pm/V over the spectral range of 550-1000 nm; its normalized effective change with temperature is approximately 1.54 × 10(-4)/°C. The thermal expansion coefficient is 6.3 × 10(-6)/°C over the range 15-125 °C. Values of the stress-optic tensor elements are q(11) - q(12) = -2.995 × 10(-13) m(2)/N and q(44) = -0.1365 × 10(-12) m(2)/N. The strain-optic tensor elements are p(11) - p(12) = -0.0266 and p(44) = -0.0595.

Abstract-Annealing procedures that greatly reduce linear birefringence in single-mode fiber coils are described in detail. These procedures have been successfully applied to coils ranging from 5 mm to 10 cm in diameter and up to 200

Measured temperature dependences of the Verdet constants of SiO(2), SF-57, and BK-7 are approximately 10(-4)/K within 3-20% of Becquerel formula estimates.

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Abstract-The Verdet constant in annealed optical fiber current sensors has been measured at wavelengths from 636 to1320 nm. The measurements are fitted to two models, one classical and the other an expansion of the classical model that includes a nonlinear term. These measurements and models are compared to previous measurements made in optical fiber and bulk SiO 2.Our measurements have an average accuracy of 60.6% and an average measurement uncertainty of 60.5% over the 636 to 1320 nm range.