In this paper, TCAD was used to simulate GGNMOS (Grounded-Gate NMOS) as an ESD protection device for 40V BCD. The physic models and the calibration method are discussed in order to get better accuracy on the result. The effects of device parameter on the ESD robustness are investigated by device simulation in order to achieve the desired ESD design window. The simulated holding voltage is in agreement with BJT model that already proven has an agreement with silicon result. Finally, the ESD design window for 40V BCD device can be obtained by changing some device parameters.

In this paper, Technology Computer-Aided Design (TCAD) is used to investigate the thermal characteristic and Thermal Safe Operating Area (T-SOA) of a novel 800V Multiple RESURF LDMOS with linear P-top Rings. Two methods of critical temperature extraction are presented and the agreement between these two methods is proven. The effects of Initial Front Rise time (IFR) and other parameters on the thermal characteristic of the device are inspected. Finally, the simulation result has an agreement with the analytic solution. Therefore, the analytic solution can replace the 3D simulation for large device which is not able to be performed using current available TCAD tools.

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