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We report possibility of SPP modes that can be excited by incident light of a fixed frequency coming at wide angles. We experimentally show such modes in structures with smooth dielectric-metal-dielectric interfaces having 2-D dielectric patterns on top. Calculated field profile establishes the field localization at the metaldielectric interfaces. We show that the position and dispersion of the excited modes can be controlled by the excitation geometry and the 2-D pattern. a) Currently at IIT, Kanpur b) Email id: achanta@tifr.res.in

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Background: Globally 499 million new episodes of curable STIs occur in the age group of 15-49 years, 80% in developing countries and 79 million in India alone. There is an increasing trend for viral STIs while bacterial STIs are on decline. Number of pregnant women with STIs is increasing by about 250 million a year in developed world and double that number in developing countries. The objective of the study was to estimate seroprevalence of STIs (Hepatitis C, Hepatitis B, HIV and Syphilis) and to evaluate impact of sociodemographic profile and sexual behaviour on STIsMethods: This observational study was carried out on 1000 asymptomatic pregnant females attending antenatal clinics, Department of Obstetrics and Gynecology, Government Medical College Patiala, Punjab.Results: Seroprevalence for STIs in asymptomatic pregnant females was 22.5%. Hepatitis C-9%, Hepatitis B-6.3%, HIV-5.5%, and Syphilis 1.7%. Illiteracy, low socio economic status, homemakers, rural background with multiple sex partners in the 21-30 years age group is associated with increasing trends of STIs in pregnancy.Conclusions: Screening asymptomatic pregnant women for STIs remains a key programme strategy for quadruple (Hepatitis C, Hepatitis B, HIV and Syphilis) prevention. Mandatory screening for STIs to reduce perinatal transmission is need of the millennium– a step toward ending STI epidemics as a global priority.

A demodulation image sensor suitable for Fluorescence Lifetime Imaging Microcopy (FLIM) was developed in a standard CMOS process with a buried photodiode (BPD) option. Contrary to existing imagers with large demodulation pixels based on BPD, the pixel featuring a pitch of 6.3um was designed for high charge transfer speed by optimizing the transfer gate shape rather than the BPD shape. Demodulation up to 32MHz was achieved at low light level, corresponding to less than one photo-electron detected per pixel and demodulation cycle. A rapid lifetime determination algorithm is proposed for employing this type of pixels in a wide-field FLIM setup. The concept is finally validated by resolving the lifetime of a ruthenium complex.