No abstract

This work presents a study of the effect of annealing temperature on the optical and structural properties of WO3 that has been deposited by Pulsed Laser Deposition (PLD) method at 300°C on the rules of glass and indicates the effect of annealing temperatures 350, 450 and 550°C for one hour on those properties. The results of X-Ray diffraction showed all the films prepared with the installation of multi-crystalline tetragonal and directional prevalent (010) for all models after annealing. The annealing led to an increase in the grain size. Full width at half maximum FWHM values of the (010) peaks of these films decreased from 1.492° to 1.064° with increasing annealing temperature, and the highest value of the specific surface area was 63 m2/gm. The natural structure of the WO3 nanoparticles films were studied by using field emission scanning electron microscopy (FESEM), it revealed that the average grain size increased with increasing of annealing temperature from 46.57 to 485.1nm. The optical features of the films were studied by Photoluminescence PL, the results gave one emission peaks located at 437 nm, and there was a red shift when the annealing temperatures were increased.

No abstract

In the present investigation, p-NiO has been deposited on n-Si (100) substrate by the spray pyrolysis method. The effect of the distance between the substrate and the nozzle on the structural, photoluminescence, and detection properties has been well inspected. XRD analysis proved the polycrystalline system with a cubic structure for NiO. The elemental analysis confirmed the existence of Ni, O, and Si materials without any impurities. The FESEM analysis showed nano and micro particles distributed on the Si layer, the micro particles have porous like structures which play a significant role as photons guider. The photoluminescence measurement depicted three main peaks at the UV and visible regions of the electromagnetic spectrum which are related to near band edge emission and defects within the crystal, respectively. I-V characteristics revealed good conductivity under UV illumination, and the highest current was recorded by a sample when the distance between the nozzle and the substrate is 25 cm. The responsivity elucidated a high value at UV region with 6.5 mA/W, and the current-time properties demonstrated good reproducibility, high stability and photoresponse, and rapid response and recovery times of 0.375 and 0.791 s, respectively at a lower bias voltage of 1.5 Volt under UV photons source.

In the present investigation, p-NiO has been deposited on n-Si (100) substrate by the spray pyrolysis method. The effect of the distance between the substrate and the nozzle on the structural, photoluminescence, and detection properties has been well inspected. XRD analysis proved the polycrystalline system with a cubic structure for NiO. The elemental analysis con rmed the existence of Ni, O, and Si materials without any impurities. The FESEM analysis showed nano and micro particles distributed on the Si layer, the micro particles have porous like structures which play a signi cant role as photons guider. The photoluminescence measurement depicted three main peaks at the UV and visible regions of the electromagnetic spectrum which are related to near band edge emission and defects within the crystal, respectively. I-V characteristics revealed good conductivity under UV illumination, and the highest current was recorded by a sample when the distance between the nozzle and the substrate is 25 cm. The responsivity elucidated a high value at UV region with 6.5 mA/W, and the current-time properties demonstrated good reproducibility, high stability and photoresponse, and rapid response and recovery times of 0.375 and 0.791 s, respectively at a lower bias voltage of 1.5 Volt under UV photons source.