In this paper, we have simulated a copper indium gallium selenide (CIGS) thin-film solar cell using a physically based two-dimensional device simulator SILVACO Atlas. The simulation of electrical characteristics and quantum efficiency was under AM1.5 illumination and a temperature of 300 K. In this work, we changed the band gap of CuInxGa1 -xSe to optimize the efficiency of the solar cell. We obtained it by varying the absorber layer thickness with different mole fractions x that affects the efficiency of the solar cell. The simulation result shows that the maximum efficiency of 16.62 % was achieved with a band gap of 1.67 eV and a thickness of 3 µm, a short-circuit current density of 29.293 mA/cm 2 , an open-circuit voltage of 1.29 V, and a fill factor of 87.79 %. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications.

Energy is necessary for development whether social, economic or even military. The production of energy by photovoltaic systems is very variable that depends enormously on the climatic conditions. That is why it will be necessary to think to store this energy to reuse it during night and days "without sun". Adding the storage element that makes it easier to use later. In this work, an experimental study on the test and the monitoring of the photovoltaic field will be presented with a storage system in the Sahara in the south of Algeria, namely electrochemical storage using storage batteries

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