In this article, we are proposing a thorough analysis of the cross, and the in-plane thermal conductivity of thin-film materials based on the 3ω method. The analysis accommodates a 2D mathematical heat transfer model of a semi-infinite body and the details of the sample preparation followed by the measurement process. The presented mathematical model for the system considers a two-dimensional space for its solution. It enables the calculation of the cross-plane thermal conductivity with a single frequency measurement, the derived equation opens new opportunities for frequency-based and penetration-depth dependent thermal conductivity analysis. The derived equation for the in-plane thermal conductivity is dependent on the cross-plane thermal conductivity. Both in and cross-plane thermal conductivities enable the measurements in two steps of measurements, the resistance-temperature slope measurement and another set of measures that extracts the third harmonic of the voltage signal. We evaluated the methodology in two sets of samples, silicon nitride and boron nitride, both on silicon wafers. We observed anisotropic thermal conductivity in the cross and the in-plane direction, despite the isotropic nature of the thin films, which we relate to the total anisotropy of the thin film-substrate system. The technique is conducive to the thermal analysis of next-generation nanoelectronic devices.

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