A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been characterized as a low-energy proton beam dosimeter. The top of the samples’ housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accelerator Centre (Seville, Spain). During irradiations, the transistors were biased to improve the sensitivity, and the silicon temperature was monitored activating the parasitic diode of the MOSFET. Bias voltages of 0, 1, 5, and 10 V were applied to four sets of three transistors, obtaining an averaged sensitivity that was linearly dependent on this voltage. In addition, the short-fading effect was studied, and the uncertainty of this effect was obtained. The bias voltage that provided an acceptable sensitivity, (11.4 ± 0.9) mV/Gy, minimizing the uncertainty due to the fading effect (−0.09 ± 0.11) Gy was 1 V for a total absorbed dose of 40 Gy. Therefore, this off-the-shelf electronic device presents promising characteristics as a dosimeter sensor for proton beams.

The use of state-of-the-art commercial processors such as graphical processing units (GPUs) is becoming increasingly common in the New Space industry in order to ensure high performance and power efficiency. However, commercial GPUs are not designed to operate in a harsh environment and therefore different protection techniques need to be applied to mitigate the effects of radiation, including those produced by single events. This paper assesses the effectiveness of redundant kernel execution on tightly constrained embedded GPUs under proton irradiation, with results suggesting a significant improvement in the SDC cross-section without penalizing the stability of the whole system. In addition, the posterior error analysis shows that the CPU is the source of the majority of the events, which are mainly dominated by functional interrupts

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